mega power chopper igbtmod? 1000 amperes/1700 volts CM1000E3U-34NF 1 04/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 outline drawing and circuit diagram description: powerex chopper igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor having a reverse- connected super-fast recovery free-wheel diode and an anode- collector connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: high power dc power supply large dc motor drives utility interface inverters ordering information: example: select the complete module number you desire from the table - i.e. CM1000E3U-34NF is a 1000v (v ces ), 1700 ampere chopper igbtmod power module. current rating v ces type amperes volts (x 50) cm 1000 34 dimensions inches millimeters m 0.0750.008 1.90.2 p 1.0 25.1 r m6 metric m6 u 0.62 15.7 v 0.71 18.0 w 0.75 19.0 x 0.43 11.0 y 0.83 21.0 z 0.41 10.5 aa 0.22 5.5 ab 0.47 12.0 ac 0.08 2.0 dimensions inches millimeters a 5.91 150.0 b 5.10 129.5 c 1.670.01 42.50.25 d 5.410.01 137.50.25 e 6.54 166.0 f 2.910.01 74.00.25 g 1.65 42.0 h 0.55 14.0 j 1.500.01 38.00.25 k 0.16 4.0 l 1.36 +0.04/-0.02 34.6 +1.0/-0.5 housing type (j.s.t. mfg. co. ltd) s = vhr-2n t = vhr-5n a d l t c measured points (baseplate side) l m h h h h h h k g u h h e f f e2 c2 c2e1 c1 g2 e1 e2 g1 c1 v ac s ab t b c j j g g r (9 places) c2e1 free-wheel diode clamp diode e2 c2 label u w x y z aa c1 p e2 g2 c1 (nc) e1 (nc) g1 (nc)
CM1000E3U-34NF mega power chopper igbtmod? 1000 amperes/1700 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 04/09 absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol CM1000E3U-34NF units junction temperature t j -40 to 150 c storage temperature *7 t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1700 volts gate-emitter voltage (c-e short) v ges 20 volts collector current dc (t c = 104c) *6 i c 1000 amperes peak collector current (pulse) *2 i cm 2000 amperes emitter current (t c = 25c) *4 i e *1 75 amperes peak emitter current (pulse) *2 i em *1 150 amperes maximum collector dissipation (t c = 25c) *2*4 p c 3900 watts mounting torque, m6 mounting screws (max.) C 40 in-lb mounting torque, m6 main terminal screw (max.) C 40 in-lb weight (typical) C 1400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 3500 v rms clamp diode part, t j = 25c unless otherwise specifed repetitive peak reverae voltage v rrm 1700 volts forward current (t c = 25c) *4 i f 1000 amperes peak forward current (pulse) *2 i fm 2000 amperes *1 i e , i em , and v ec represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *2 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) is baseplate side. *6 case temperature (t c ') and heatsink temperature (t f ') measured point is just under the chips. *7 the operation temperature is restrained by the permission temperature of female connector housing. 0 0 0 0 dimensions in mm (tolerance: 1mm) igbt clamp diode diode chip location (top view) 10.5 98.6 23.4 36.2 52.0 64.8 77.7 93.5 106.4 119.2 10.6 23.2 35.8 52.2 64.8 77.4 93.6 106.2 118.8 39.2 48.4 48.4 46.6 51.4
CM1000E3U-34NF mega power chopper igbtmod? 1000 amperes/1700 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 04/09 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 a gate-emitter threshold voltage v ge(th) i c = 100ma, v ce = 10v 5.5 7 8.5 volts collector-emitter saturation voltage v ce(sat) i c = 1000a, v ge = 15v, t j = 25c *3 C 2.2 2.8 volts (without lead resistance) (chip) i c = 1000a, v ge = 15v, t j = 125c *3 C 2.45 C volts module lead resistance r (lead) i c = 1000a, terminal-chip C 0.286 C m input capacitance c ies C C 220 nf output capacitance c oes v ce = 10v, v ge = 0v C C 25 nf reverse transfer capacitance c res C C 4.7 nf total gate charge q g v cc = 1000v, i c = 1000a, v ge = 15v C 6000 C nc turn-on delay time t d(on) v cc = 1000v, i c = 1000a, C C 600 ns turn-on rise time t r v ge = 15v, C C 150 ns turn-off delay time t d(off) r g = 0.47 , C C 900 ns turn-off fall time t f inductive load C C 200 ns emitter-collector voltage *1 v ec i e = 75a, v ge = 0v *3 C C 2.8 volts external gate resistance r g 0.47 C 4.7 clamp diode characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units repetitive peak reverse current i rrm v r = v rrm C C 1 ma forward voltage v fm i f =1000a *3 C C 3.0 volts reverse recovery time t rr i f =1000a C C 450 ns reverse recovery charge q rr i f =1000a C 90 C c thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *4 r th(j-c) q igbt C C 0.032 c/w thermal resistance, junction to case *4 r th(j-c) d clamp C C 0.053 c/w thermal resistance, junction to case *6 r th(j-c') q igbt C C 0.014 c/w thermal resistance, junction to case *6 r th(j-c') d clamp C C 0.023 c/w thermal resistance, junction to case *4 r th(c-f) d thermal grease applied per 1/2 module *5 C 0.016 C c/w contact thermal resistance *6 r th(c-f) thermal grease applied per 1/2 module *5 C 0.012 C c/w *1 i e , i em , and v ec represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *3 pulse width and repetition rate should be such as to cause negligible temperature rise. *4 case temperature (t c ) is baseplate side. *5 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *6 case temperature (t c ') and heatsink temperature (t f ') measured point is just under the chips.
CM1000E3U-34NF mega power chopper igbtmod? 1000 amperes/1700 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 04/09 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 0.5 1.5 1.0 3.0 3.5 2.0 2.5 4.0 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 10 4 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 3 4 0 400 800 2 1 0 2000 1200 1600 v ge = 15v t j = 25c t j = 125c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 1000a i c = 2000a i c = 400a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 v ge = 20v 10 11 12 15 13 9 8 t j = 25 c collector current, i c , (amperes) 0 400 1600 800 1200 2000 0 400 1600 800 1200 2000 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 8 12 16 20 v ce = 10v t j = 25c t j = 125c 4 10 -1 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) 20 0 16 12 8 4 0 collector current, i c , (amperes) 10 4 10 2 10 3 10 3 10 2 10 1 switching time, (ns) 2000 4000 10000 8000 6000 v cc = 1000v t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 0.47? t j = 125c inductive load t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) 10 4 10 2 10 3 10 3 10 2 10 4 10 3 10 2 reverse recovery current, i rr , (amperes) t rr i rr v cc = 1000v v ge = 15v r g = 0.47? t j = 25c inductive load v cc = 800v i c = 1000a 10 4 10 4 gate charge, v ge half-bridge switching characteristics (typical) reverse recovery characteristics (typical)
CM1000E3U-34NF mega power chopper igbtmod? 1000 amperes/1700 volts 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 04/09 forward current, i f , (amperes) 10 2 10 3 10 4 10 0 10 1 10 2 10 3 v cc = 1000v v ge = 15v t j = 125c r g = 0.47? inductive load collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 2 10 3 10 4 10 0 10 2 10 1 10 3 v cc = 1000v v ge = 15v t j = 125c r g = 0.47? e on e off inductive load external gate resistance, r g , (?) v cc = 1000v v ge = 15v t j = 125c i c = 1000a inductive load external gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 0 3 2 1 5 4 10 1 10 2 10 3 v cc = 1000v v ge = 15v t j = 125c i c = 1000a e on e off inductive load 0 3 2 1 5 4 10 1 10 2 10 3 reverse recovery energy, e rr , (mj/pulse) reverse recovery energy vs. forward current (typical) switching loss vs. collector current (typical) reverse recovery energy, e rr , (mj/pulse) reverse recovery energy vs. external gate resistance (typical) switching energy vs. external gate resistance (typical) time, (s) 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) transient thermal impedance characteristics (igbt & clamp diode) 10 0 normalized transient thermal impedance, z th(j-c) single pulse t c = 25c per unit base r th(j-c') = 0.014c/w (igbt) r th(j-c') = 0.023c/w (clamp)
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